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| SDD190 Diode-Diode Modules Dimensions in mm (1mm=0.0394") Type SDD190N08 SDD190N12 SDD190N14 SDD190N16 SDD190N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Symbol IFRMS IFAVM TVJ=TVJM TC=100oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 Test Conditions Maximum Ratings 300 190 Unit A IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 6600 7290 5600 6200 218000 221000 157000 160000 -40...+150 150 -40...+125 A i2dt A2s TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s o C 3000 3600 2.25-2.75/20-25 4.5-5.5/40-48 120 V~ Nm/lb.in. g Mounting torque (M6) Terminal connection torque (M6) Typical including screws SDD190 Diode-Diode Modules Symbol IR VF VTO rT QS IRM RthJC RthJK dS dA a per diode; DC current per module per diode; DC current per module TVJ=TVJM; VR=VRRM IF=300A; TVJ=25 C o Test Conditions Characteristic Values 20 1.15 0.8 0.8 550 235 0.21 0.105 0.31 0.155 12.7 9.6 50 Unit mA V V m uC A K/W K/W mm mm m/s2 For power-loss calculations only TVJ=TVJM TVJ=125 C; IF=300A; -di/dt=50A/us o Creepage distance on surface Strike distance through air Maximum allowable acceleration FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD190 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD190 SDD190 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x SDD190 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.210 0.223 0.233 0.260 0.295 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0087 0.0163 0.185 ti (s) 0.001 0.065 0.4 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.31 0.323 0.333 0.360 0.395 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0087 0.0163 0.185 0.1 ti (s) 0.001 0.065 0.4 1.29 |
Price & Availability of SDD190N08
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